Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

Magnetotransport in high mobility epitaxial graphene

Epitaxial graphene layers grown on single-crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Patterned structures show two-dimensional electron gas properties with mobilities exceeding 3 m2/Vs. Magnetotransport measurements (Shubnikov–de Haas oscillations) indicate that the transport p...

Epitaxial graphene on silicon carbide: Introduction to structured graphene

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

100-GHz transistors from wafer-scale epitaxial graphene.

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...

Field effect in epitaxial graphene on a silicon carbide substrate

Field effect in epitaxial graphene on a silicon carbide substrate Gong Gu Sarnoff Corporation, CN5300, Princeton, New Jersey 08543 Shu Nie and R. M. Feenstra Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 R. P. Devaty and W. J. Choyke Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 152650 Winston K. Chan and Michael G. K...

Superconductivity in Ca-intercalated epitaxial graphene on silicon carbide